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SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175 _ C MOSFET
FEATURES
PRODUCT SUMMARY
V DS (V) r DS(on) ( W )
0.0095 @ V GS = 10 V
20
0.017 @ V GS = 4.5 V
TO-252
Drain Connected to Tab
I D (A) a
20
15
G
D
D TrenchFET r Power MOSFET
D 175 _ C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R g Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
? Desktop
? Server
G
D
S
Top View
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
20
" 20
Unit
V
Continuous Drain Current a
T A = 25 _ C
T C = 100 _ C
I D
20
14
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
I DM
I S
100
4.3
A
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 0.1 1 mH
T A = 25 _ C
T C = 25 _ C
I AS
E AS
P D
T J , T stg
29
42
6.5 a
39.5
? 55 to 175
mJ
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t v 10 sec
Steady State
R thJA
R thJC
19
40
3.1
23
50
3.8
_ C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
www.vishay.com
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